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Proceedings of ITME 1990 z. 30
54, [2] s. : il. 24 cm. ; Bibliogr. s. 19
ITME, sygn. dostępny ; click here to follow the link
Copyright-protected material. May be used within the limits of statutory user freedoms
Institute of Electronic Materials Technology
Library of the Electronic Materials Technology Institute
Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund
Oct 2, 2020
Aug 13, 2013
1160
https://rcin.org.pl./publication/18248
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Pawłowska Marta, Badanie doskonałości struktury monokryształów GaAs o obniżonej gęstości dyslokacji | Oct 2, 2020 |
Pawłowska Marta
Milwidskij M.G