Title:

Badanie doskonałości struktury monokryształów GaAs o obniżonej gęstości dyslokacji = The investigation of low dislocation GaAs single crystals perfection

Subtitle:

Proceedings of ITME 1990 z. 30

Creator:

Pawłowska Marta

Publisher:

Wydaw. Przem. "WEMA"

Place of publishing:

Warszawa

Date issued/created:

1990

Description:

54, [2] s. : il. 24 cm. ; Bibliogr. s. 19

Subject and Keywords:

Electronic - journal - material ; Electronic materials ; structural perfection ; GaAs dislocation density

Relation:

Proceedings of ITME

Issue:

30

Start page:

3

End page:

54

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open