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Title: Preparation of a BiTeI polar semiconductor with a strong asymmetric inversion / Andrzej Materna.

Creator:

Materna Andrzej

Date issued/created:

2017

Resource type:

Text

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Subtitle:

Otrzymywanie polarnego półprzewodnika BiTeI, wykazującego silną asymetrię inwersji

Contributor:

Materna Andrzej

Publisher:

ITME

Place of publishing:

Warsaw

Description:

Bibliogr.: s.23 ; 12-23 il., 30 cm.

Type of object:

Book/Chapter

References:

krystalizacja metodą VB
krystalizacja metodą CVT

Relation:

Materiały Elektroniczne - Electronic Materials

Volume:

45

Issue:

2-4

Start page:

12

End page:

23

Detailed Resource Type:

Article

Format:

A4 ; application/pdf

Resource Identifier:

oai:rcin.org.pl:70333

Source:

click here to follow the link

Language:

eng

Language of abstract:

eng

Rights:

Creative Commons Attribution BY 4.0 license

Terms of use:

Copyright-protected material. [CC BY 4.0] May be used within the scope specified in Creative Commons Attribution BY 4.0 license, full text available at:

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Activities popularizing science (DUN) ; Ministry of Science and Higher Education

Access:

Open

Subject and keywords:

topological insulator BiTeX (X = I, Br, Cl) compounds VB method CVT method

Object collections:

• Digital Repository of Scientific Institutes > Partners' collections > Łukasiewicz Research Network - Institute of Microelectronics and Photonics > Electronic Materials
• Digital Repository of Scientific Institutes > Literature > Books/Chapters

Last modified:

Oct 2, 2020

In our library since:

Apr 16, 2019

Number of object content downloads / hits:

276

All available object's versions:

https://rcin.org.pl./publication/91700

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OAI-PMH

• MATERIAŁY ELEKTRONICZNE
  • Materiały Elektroniczne 1973
  • Materiały Elektroniczne 1974
  • Materiały Elektroniczne 1975
  • Materiały Elektroniczne 1976
  • Materiały Elektroniczne 1977
  • Materiały Elektroniczne 1978
  • Materiały Elektroniczne 1979
  • Materiały Elektroniczne 1980
  • Materiały Elektroniczne 1981
  • Materiały Elektroniczne 1982
  • Materiały Elektroniczne 1983
  • Materiały Elektroniczne 1984
  • Materiały Elektroniczne 1985
  • Materiały Elektroniczne 1986
  • Materiały Elektroniczne 1987
  • Materiały Elektroniczne 1988
  • Materiały Elektroniczne 1989
  • Materiały Elektroniczne 1990
  • Materiały Elektroniczne 1991
  • Materiały Elektroniczne 1992
  • Materiały Elektroniczne 1993
  • Materiały Elektroniczne 1994
  • Materiały Elektroniczne 1995
  • Materiały Elektroniczne 1996
  • Materiały Elektroniczne 1997
  • Materiały Elektroniczne 1998
  • Materiały Elektroniczne 1999
  • Materiały Elektroniczne 2000
  • Materiały Elektroniczne 2001
  • Materiały Elektroniczne 2002
  • Materiały Elektroniczne 2003
  • Materiały Elektroniczne 2004
  • Materiały Elektroniczne 2005
  • Materiały Elektroniczne 2006
  • Materiały Elektroniczne 2007
  • Materiały Elektroniczne 2008
  • Materiały Elektroniczne 2009
  • Materiały Elektroniczne 2010
  • Materiały Elektroniczne 2011
  • Materiały Elektroniczne 2012
  • Materiały Elektroniczne 2013
  • Materiały Elektroniczne 2014
  • Materiały Elektroniczne 2015
  • Materiały Elektroniczne 2016
  • Materiały Elektroniczne 2017
    • Materiały Elektroniczne 2017 Vol. 45 No. 1
    • Materiały Elektroniczne 2017 Vol. 45 No. 2-4
      • Spis treści, Vol. 45 No. 2-4 [2017]
      • Soluch Waldemar, Influence of gold electrodes on the properties of shear horizontal acoustic plate mode viscosity sensor in BT-cut quartz
      • Strachowski Tomasz, The influence of reducing agents on the reduced graphene oxide specific surface area determined on the basis of nitrogen adsorption isotherm
      • Materna Andrzej, Preparation of a BiTeI polar semiconductor with a strong asymmetric inversion
  • Materiały Elektroniczne 2018
  • Materiały Elektroniczne 2019
  • Materiały Elektroniczne 2020

Edition name	Date
Materna Andrzej, Preparation of a BiTeI polar semiconductor with a strong asymmetric inversion	Oct 2, 2020

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