Preparation of a BiTeI polar semiconductor with a strong asymmetric inversion / Andrzej Materna. - Digital Repository of Scientific Institutes

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Preparation of a BiTeI polar semiconductor with a strong asymmetric inversion / Andrzej Materna.

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Title: Preparation of a BiTeI polar semiconductor with a strong asymmetric inversion / Andrzej Materna.

Creator:

Materna Andrzej

Date issued/created:

Resource type:

Subtitle:

Otrzymywanie polarnego półprzewodnika BiTeI, wykazującego silną asymetrię inwersji

Contributor:

Materna Andrzej

Publisher:

Place of publishing:

Description:

Bibliogr.: s.23 ; 12-23 il., 30 cm.

Type of object:

References:

krystalizacja metodą VB
krystalizacja metodą CVT

Relation:

Materiały Elektroniczne - Electronic Materials

Volume:

Issue:

Start page:

End page:

Detailed Resource Type:

Format:

A4 ; application/pdf

Resource Identifier:

oai:rcin.org.pl:70333

Source:

click here to follow the link

Language:

Language of abstract:

Rights:

Creative Commons Attribution BY 4.0 license

Terms of use:

Copyright-protected material. [CC BY 4.0] May be used within the scope specified in Creative Commons Attribution BY 4.0 license, full text available at:

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Activities popularizing science (DUN) ; Ministry of Science and Higher Education

Access:

Subject and keywords:

topological insulator BiTeX (X = I, Br, Cl) compounds VB method CVT method

Object collections:

Last modified:

Oct 2, 2020

In our library since:

Apr 16, 2019

Number of object content downloads / hits:

272

All available object's versions:

https://rcin.org.pl./publication/91700

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MATERIAŁY ELEKTRONICZNE

Edition name	Date
Materna Andrzej, Preparation of a BiTeI polar semiconductor with a strong asymmetric inversion	Oct 2, 2020

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iso690-author-date apa modern-language-association chicago-author-date

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