Title:

Preparation of a BiTeI polar semiconductor with a strong asymmetric inversion / Andrzej Materna.

Subtitle:

Otrzymywanie polarnego półprzewodnika BiTeI, wykazującego silną asymetrię inwersji

Creator:

Materna Andrzej

Contributor:

Materna Andrzej

Publisher:

ITME

Place of publishing:

Warsaw

Date issued/created:

2017

Description:

Bibliogr.: s.23 ; 12-23 il., 30 cm.

Type of object:

Book/Chapter

Subject and Keywords:

topological insulator ; BiTeX (X = I, Br, Cl) compounds ; VB method ; CVT method

References:

krystalizacja metodą VB
krystalizacja metodą CVT

Relation:

Materiały Elektroniczne - Electronic Materials

Volume:

45

Issue:

2-4

Start page:

12

End page:

23

Resource type:

Text

Detailed Resource Type:

Article

Format:

A4 ; application/pdf

Source:

click here to follow the link

Language:

eng

Language of abstract:

eng

Rights:

Creative Commons Attribution BY 4.0 license

Terms of use:

Copyright-protected material. [CC BY 4.0] May be used within the scope specified in Creative Commons Attribution BY 4.0 license, full text available at:

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Activities popularizing science (DUN) ; Ministry of Science and Higher Education

Access:

Open