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Deep defect centres in ultra-high-resistivity FZ silicon

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Title: Deep defect centres in ultra-high-resistivity FZ silicon

Creator:

Kamiński Paweł

Date issued/created:

Resource type:

Subtitle:

Electronic Materials V. 42 No 4

Contributor:

Kozłowski Roman ; Krupka Jerzy ; Kozubal Michał ; Wodzyński Maciej ; Żelazko Jarosław

Publisher:

Place of publishing:

Description:

Bibliogr. p.: 23-24 ; s.:16-24 il. 30 cm.

Type of object:

References:

p.: 23-24

Relation:

Electronic Materials

Volume:

Issue:

Start page:

End page:

Detailed Resource Type:

Format:

application/pdf

Resource Identifier:

oai:rcin.org.pl:55813

Source:

click here to follow the link

Language:

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Subject and keywords:

deep defect centers HRPITS ultra-high-resistivity silicon

Object collections:

Last modified:

Oct 2, 2020

In our library since:

Aug 13, 2015

Number of object content downloads / hits:

353

All available object's versions:

https://rcin.org.pl./publication/76482

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MATERIAŁY ELEKTRONICZNE

Edition name	Date
Kamiński Paweł, Głębokie centra defektowe w krzemie o bardzo wysokiej rezystywności	Oct 2, 2020

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