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Ultraviolet-sensitive, visible-blind GaN detectors grown by MOCVD epitaxy

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Title: Ultraviolet-sensitive, visible-blind GaN detectors grown by MOCVD epitaxy

Creator:

Korona Krzysztof

Date issued/created:

Resource type:

Subtitle:

MST News Poland 4(8)/1997

Publisher:

Institute of Electronic Materials Technology

Place of publishing:

Description:

s. 6. : il. 30 cm ; Bibliogr. s.6

Type of object:

Relation:

MST News Poland

Issue:

Start page:

End page:

Detailed Resource Type:

Format:

application/pdf

Resource Identifier:

oai:rcin.org.pl:38992

Source:

ITME, sygn. ; click here to follow the link

Language:

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Institute of Electronic Materials Technology

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Subject and keywords:

photodetector UV GaN MOCVD

Object collections:

Last modified:

Oct 2, 2020

In our library since:

Jan 27, 2014

Number of object content downloads / hits:

458

All available object's versions:

https://rcin.org.pl./publication/55850

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ARTYKUŁY

Edition name	Date
Korona Krzysztof, Ultraviolet-sensitive, visible-blind GaN detectors grown by MOCVD epitaxy	Oct 2, 2020

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