Title:

Ultraviolet-sensitive, visible-blind GaN detectors grown by MOCVD epitaxy

Subtitle:

MST News Poland 4(8)/1997

Creator:

Korona Krzysztof

Publisher:

Institute of Electronic Materials Technology

Place of publishing:

Warszawa

Date issued/created:

1997

Description:

s. 6. : il. 30 cm ; Bibliogr. s.6

Type of object:

Book/Chapter

Subject and Keywords:

photodetector ; UV ; GaN ; MOCVD

Relation:

MST News Poland

Issue:

4

Start page:

6

End page:

6

Resource type:

Text

Detailed Resource Type:

Artykuł

Format:

application/pdf

Source:

ITME, sygn. ; click here to follow the link

Language:

eng

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Institute of Electronic Materials Technology

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open