Określanie stopnia kompensacji w Si : P na podstawie temperaturowej zależności koncentracji elektronów = Compensation ratio determination for Si:P based on electron concentration temperature dependence - Digital Repository of Scientific Institutes

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Określanie stopnia kompensacji w Si : P na podstawie temperaturowej zależności koncentracji elektronów = Compensation ratio determination for Si:P based on electron concentration temperature dependence

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Title: Określanie stopnia kompensacji w Si : P na podstawie temperaturowej zależności koncentracji elektronów = Compensation ratio determination for Si:P based on electron concentration temperature dependence

Creator:

Date issued/created:

Resource type:

Subtitle:

Materiały Elektroniczne 1985 nr 3(51)

Contributor:

Lichowski Maciej ; Strzelecka Stanisława

Publisher:

Wydaw. Przemysłu Maszynowego "WEMA"

Place of publishing:

Description:

s. 47-59 : il. ; 24 cm. ; Bibliogr. s. 56

Relation:

Electronic Materials

Volume:

Issue:

Start page:

End page:

Detailed Resource Type:

Format:

application/pdf

Resource Identifier:

oai:rcin.org.pl:9486

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

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Subject and keywords:

Electronic - journal - material Electronic materials Si compensation payments LFA electron concentration

Object collections:

Last modified:

Oct 2, 2020

In our library since:

Aug 6, 2012

Number of object content downloads / hits:

475

All available object's versions:

https://rcin.org.pl./publication/12417

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MATERIAŁY ELEKTRONICZNE

Edition name	Date
Kot Waldemar, Określanie stopnia kompensacji w Si : P na podstawie temperaturowej zależności koncentracji elektronów	Oct 2, 2020

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