Title:

Określanie stopnia kompensacji w Si : P na podstawie temperaturowej zależności koncentracji elektronów = Compensation ratio determination for Si:P based on electron concentration temperature dependence

Subtitle:

Materiały Elektroniczne 1985 nr 3(51)

Creator:

Kot Waldemar

Contributor:

Lichowski Maciej ; Strzelecka Stanisława

Publisher:

Wydaw. Przemysłu Maszynowego "WEMA"

Place of publishing:

Warszawa

Date issued/created:

1985

Description:

s. 47-59 : il. ; 24 cm. ; Bibliogr. s. 56

Subject and Keywords:

Electronic - journal - material ; Electronic materials ; Si ; compensation payments LFA ; electron concentration

Relation:

Electronic Materials

Volume:

51

Issue:

3

Start page:

47

End page:

59

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open