Advanced search
Advanced search
Advanced search
Advanced search
Advanced search
Materiały Elektroniczne 1993 T.21 nr 4
Dobrzański Lech ; Kozłowski Roman
9-27 s. : il. ; 24 cm. ; Bibliogr. s. 25-27
ITME, sygn. dostępny ; click here to follow the link
Copyright-protected material. May be used within the limits of statutory user freedoms
Institute of Electronic Materials Technology
Library of the Electronic Materials Technology Institute
Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund
Oct 2, 2020
Sep 20, 2012
338
https://rcin.org.pl./publication/14330
Edition name | Date |
---|---|
Kamiński Paweł, Głębokie centra defektowe w warstwie czynnej tranzystorów MESFET | Oct 2, 2020 |
Kot Waldemar
Rosiński Witold
Hruban Andrzej
Milwidskij M.G.
Tomaszewski Jacek
Pawłowska Marta