Subtitle:

Wyznaczanie grubości warstw BN na podłożu Al2O3 za pomocąspektroskopii FT-IR

Publisher:

Łukasiewicz – ITME

Place of publishing:

Warsaw

Date on-line publ.:

2020

Description:

24 cm.

Type of object:

Book/Chapter

Abstract:

Hexagonal boron nitride (h-BN) is an attractive material for applications in electronics. The technology of devices basedon BN requires non-destructive and fast methods of controlling the parameters of the produced layers. Boron nitride layersof different thickness were grown on sapphire substrates (Al2O3) using the MOCVD method. The obtained films werecharacterized by FT-IR spectroscopy using IRR and ATR techniques and by the XRR and SEM methods. We showed thatby analyzing the ATR or reflectance spectrum in the range of 600-2500 cm-1 we can measure the thickness of a BN layeron the Al2O3 substrate. Our measuring method allows measuring the layers with a thickness from ~2 nm to approx. 20 nm.

Relation:

Electronic Materials

Volume:

48

Issue:

1-4

Start page:

15

End page:

20

Detailed Resource Type:

Article

Format:

application/octet-stream

Resource Identifier:

oai:rcin.org.pl:156161

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

eng

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. [CC BY 4.0] May be used within the scope specified in Creative Commons Attribution BY 4.0 license, full text available at:

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Institute of Electronic Materials Technology

Projects co-financed by:

Activities popularizing science (DUN) ; Ministry of Science and Higher Education

Access:

Open