Stoichiometry control of compound semiconductor crystals. Part 1 = - Digital Repository of Scientific Institutes

Skip to main menu
Skip to search engine
Skip to content
Skip to footer

Stoichiometry control of compound semiconductor crystals. Part 1 =

Download

Title: Stoichiometry control of compound semiconductor crystals. Part 1 =

Creator:

Nishizawa Jun-ichi

Date issued/created:

Resource type:

Subtitle:

Materiały Elektroniczne 1996 T.24 nr 4

Contributor:

Publisher:

Place of publishing:

Description:

5-25 s. : il. ; 24 cm. ; Bibliogr. s. 24-25

Relation:

Electronic Materials

Volume:

Issue:

Start page:

End page:

Detailed Resource Type:

Format:

application/pdf

Resource Identifier:

oai:rcin.org.pl:15358

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Subject and keywords:

Electronic - materials Electronic - journal - materials stoichiometry semiconductor crystal GaAs

Object collections:

Last modified:

Oct 2, 2020

In our library since:

Oct 15, 2012

Number of object content downloads / hits:

202

All available object's versions:

https://rcin.org.pl./publication/14996

Show description in RDF format:

Show description in RDFa format:

Show description in OAI-PMH format:

MATERIAŁY ELEKTRONICZNE

Edition name	Date
Nishizawa Jun-ichi, Stoichiometry control of compound semiconductor crystals. Part 1	Oct 2, 2020

Objects Similar

Układy scalone z arsenku galu = GaAs integrated circuits

Marciniak Wiesław

1990

Text

Arsenek galu : z doświadczeniem ku przyszłości = Gallium arsenide: with experience towards future

Rosiński Witold

1990

Text

Swiatowy stan technologii otrzymywanych monokryształów objętościowych arsenku galu = World state technololgy of GaAs bulk single-crystal growing

Milwidskij M.G.

1976

Text

Charakteryzacja arsenku galu na tranzystory MESFET = GaAs diagnostics for MESFET's

Kot Waldemar

1990

Text

Heteroepitaksjalne struktury GaAs-Si = GaAs-Si heteroepitaxial structures

Tomaszewski Jacek

1990

Text

Defekty strukturalne w monokryształach GaAs o niskiej gęstości dyslokacji = Structural defects in low-dislocation GaAs single crystals

Pawłowska Marta

1988

Text

Impulsowe wygrzewanie implantowanego arsenku galu = Rapid thermal annealing of imolanted galium arsenide

Rosiński Witold

1996

Text

Siła piezotermoelektryczna w arsenku galu typu p = The piezothermoelectric force in the gallium arsenide type p

Swiridow Iwan

1973

Text

More

Citation style:

iso690-author-date apa modern-language-association chicago-author-date

This page uses 'cookies'. More information