Title:

15R-SiC w kryształach 4H- i 6H-SiC otrzymywanych metodą transportu fizycznego z fazy gazowej = 15R-SiC inclusions in 4H-and 6H-SiC crystals grown by the physical vapour transport method

Subtitle:

Materiały Elektroniczne 2012 T.40 nr 3

Creator:

Tymicki Emil

Contributor:

Raczkiewicz Marcin ; Racka Katarzyna ; Grasza Krzysztof ; Kościewicz Kinga ; Diduszko Ryszard ; Mazur Krystyna ; Łukasiewicz Tadeusz

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

2012

Description:

s. 17-17-27 : il. 30 cm

Subject and Keywords:

Electronic - journal - materials ; Electronic - materials ; SiC ; 15R-SiC ; polytype inclusion ; Method PVT

Relation:

Electronic Materials

Volume:

40

Issue:

3

Start page:

17

End page:

27

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Institute of Electronic Materials Technology

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open