Title:

Characterization of epitaxial silicon for MOS VLSI IC by deep level transsient spectroscopy and minority carrier lifetime measurements =

Subtitle:

Materiały Elektroniczne 1992 T.20 nr 4

Creator:

Nossarzewska-Orłowska Elżbieta

Contributor:

Kamiński Paweł ; Sarnecki Jerzy ; Kozłowski Roman

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

1992

Description:

12-18 s. : il. ; 24 cm.

Subject and Keywords:

Electronic - materials ; epitaxial layer ; minority carrier lifetime

Relation:

Electronic Materials

Volume:

20

Issue:

4

Start page:

12

End page:

18

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

eng

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open