Title:

Badania nad otrzymywaniem warstw epitaksjalnych arsenku galu z fazy gazowej w układzie otwartym Ga-AsCl3-H2 = Investigations on obtaining of gallium arsenide epitaxial layers from gase phase in the open system Ga-AsCl3-H2

Subtitle:

Materiały Elektroniczne 1973 nr 1

Creator:

Brzozowski Waldemar

Publisher:

Wydaw. Przemysłu Maszynowego "WEMA"

Place of publishing:

Warsaw

Date issued/created:

1973

Description:

s. 9-14 : il. ; 24 cm. ; Bibliogr. s. 14

Type of object:

Book/Chapter

Subject and Keywords:

Electronic- materials ; Electronic - journal - materials ; GaAs ; CVD ; homoepitaxy

Relation:

Electronic Materials

Issue:

1

Start page:

9

End page:

14

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 1. Research and development of modern technologies ; European Union. European Regional Development Fund

Access:

Open