Title:

Nowe stanowisko pomiarowe do charakteryzacji centrów defektowych metodą niestacjonarnej spektroskopii pojemnościowej = New measurement system for characterization of defect centers by capacitance transient spectroscopy method

Subtitle:

Materiały Elektroniczne 2013 T.41 nr 3

Creator:

Kozubal Michał

Contributor:

Pawłowski Michał ; Mawłowski Marek ; Brzozowski Michał

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

2013

Description:

9-18 s. : il. 30 cm.

Subject and Keywords:

DLTS ; defect centers ; SiC

Relation:

Electronic Materials

Volume:

41

Issue:

3

Start page:

9

End page:

18

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open