Title:

Monokryształy Si GaAs o orientacji [310] jako materiał na podłoża do osadzania warstw epitaksjalnych = [310]-oriented SI GaAs single crystals as material for epitaxial substrates

Subtitle:

Materiały Elektroniczne 2013 T.41 nr 2

Creator:

Hruban Andrzej

Contributor:

Orłowski Wacław ; Strzelecka Stanisława ; Piersa Mirosław ; Jurkiewicz-Wegner Elżbieta ; Mirowska Aleksandra ; Rojek Anna

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

2013

Description:

s. 18-25 : il. ; 30 cm. ; Bibliogr. s. 25

Subject and Keywords:

SI GaAs ; gallium arsenide ; Czochralski method ; LEC ; orientation

Relation:

Electronic Materials

Volume:

41

Issue:

2

Start page:

18

End page:

25

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open