Title:

Identyfikacja centrów defektowych w warstwach epitaksjalnych 4H-SiC = Identification of defect centers in 4H-SiC epitaxial layers

Subtitle:

Materiały Elektroniczne 2013 T.41 nr 1

Creator:

Kozubal Michał

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

2013

Description:

3-9 s. : il. 30 cm

Type of object:

Book/Chapter

Subject and Keywords:

point defects ; deep traps ; DLTS ; SiC ; electron irradiation

Relation:

Electronic Materials

Volume:

41

Issue:

1

Start page:

3

End page:

9

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Institute of Electronic Materials Technology

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open