Title:

Niestacjonarna spektroskopia fotoprądowa o dużej rozdzielczości jako nowa metoda badania centrów defektowych w półprzewodnikach wysokorezystywnych. = High resolution photoinduced transient spectroscopy as a new characterization method of defect centres in high resistivity semiconductors

Creator:

Kozłowski Roman

Contributor:

Kamiński, Paweł : Promotor.

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

2001

Description:

186 s. : il. ; 30 cm. ; Bibliogr. s. 127-131

Subject and Keywords:

Electronic - materials ; HRPITS ; SI GaAs ; SI Si ; SI InP ; defect center ; deep level

Relation:

PhD Dissertations

Resource type:

Text

Detailed Resource Type:

PhD Dissertations

Format:

application/pdf

Source:

ITME, sygn. P/1932 ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open