Title:

Deep-level deffects in epitaxial 4H-SiC irradiated with low-energy electrons = Głębokie centra defektowe w warstwach epitaksjalnych 4H-SiC napromieniowanych elektronami o niskiej energii

Subtitle:

Materiały Elektroniczne 2010 T.38 nr 3/4

Creator:

Kamiński Paweł

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

2010

Description:

Bibliogr. s. 33-34 ; 26-34 s. : il. 30 cm.

Subject and Keywords:

Electronic - journal - materials ; Electronic - materials ; DLTS ; 4H-SiC ; electron traps ; points defects

Relation:

Electronic Materials

Volume:

38

Issue:

3/4

Start page:

26

End page:

34

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

eng

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open