Title:

Wpływ koncentracji donorów na właściwości i koncentrację centrów defektowych w warstwach epitaksjalnych 4H-SiC = Effect of donor concentration on parameters and concentration of defect centers in 4H-SiC epitaxial layers

Subtitle:

Materiały Elektroniczne 2010 T.38 nr 2

Creator:

Kozubal Michał

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

2010

Description:

Bibliogr. s. 9 ; 3-9 s. : il. 30 cm.

Subject and Keywords:

Electronic - journal - materials ; Electronic - materials ; 4H-SiC ; defect centers ; epitaxial layers

Relation:

Electronic Materials

Volume:

38

Issue:

2

Start page:

3

End page:

9

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open