Title:

Głębokie centra defektowe w krzemowych warstwach epitaksjalnych zanieczyszczonych żelazem= Deep-level defects in Fe-contaminated epitaxial silicon

Subtitle:

Materiały Elektroniczne 1995T.23 nr 1

Creator:

Plewa Dariusz

Contributor:

Kozłowski Roman ; Kamiński Paweł

Publisher:

ITME

Place of publishing:

Warszawa

Date issued/created:

1995

Description:

5-18 s. : il. ; 24 cm. ; Bibliogr. s. 17

Subject and Keywords:

Electronic - materials ; Electronic - journal - materials ; deep-level defect ; silicon epitaxial layer

Relation:

Electronic Materials

Volume:

23

Issue:

1

Start page:

5

End page:

18

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open