Title:

Badanie metodą ESR półizolacyjnych kryształów GaAs i InP naświetlanych elektronami = ESR study of paramagnetic defects in electron-irradiated InP and GaAs crystals

Subtitle:

Materiały Elektroniczne 1988 nr 3(63)

Creator:

Jabłoński Ryszard

Contributor:

Palczewska Maria ; Orłowski Wacław ; Hruban Andrzej ; Nowysz Karol

Publisher:

Wydaw. Przemysłu Maszynowego "WEMA"

Place of publishing:

Warszawa

Date issued/created:

1988

Description:

s. 21-26 : il. ; 24 cm. ; Bibliogr. s. 26

Subject and Keywords:

Electronic - journal - material ; Electronic materials ; ESR ; SI GaAs ; SI Ing

Relation:

Electronic Materials

Volume:

63

Issue:

3

Start page:

21

End page:

26

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open