Title:

Badanie powstawania dyslokacji niedopasowania w krzemowych warstwach epitaksjalnych = The investigations of misfit dislocations creation in silicon epitaxial layers

Subtitle:

Materiały Elektroniczne 1980 nr 2(30)

Creator:

Mazur Krystyna

Contributor:

Wierzchowski Wojciech

Publisher:

Wydaw. Przemysłu Maszynowego "WEMA"

Place of publishing:

Warszawa

Date issued/created:

1981

Description:

s. 33-[49] : il. ; 24 cm. ; Bibliogr. s. [49]

Subject and Keywords:

Electronic - journal - materials ; Electronic - materials ; misfit dislocation ; silicon epitaxial layer

Relation:

Electronic Materials

Volume:

30

Issue:

2

Start page:

33

End page:

49

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open