Title:

Wpływ wyjściowego arsenku galu na moc promieniowania dyfuzyjnych diod elektroluminescencyjnych = The influence of initial gallium arsenide parameters on power emitted by light-emitting diodes

Subtitle:

Materiały Elektroniczne 1975 nr 2(10)

Creator:

Kowalski Jerzy

Contributor:

Kamiński Paweł ; Halak Aleksander ; Pietras Edward

Publisher:

Wydaw. Przemysłu Maszynowego "WEMA"

Place of publishing:

Warszawa

Date issued/created:

1975

Description:

s. 18-23 : il. ; 24 cm. ; Bibliogr. s. 38

Subject and Keywords:

Electronic - materials ; Electronic - journal - materials ; DEL ; GaAs

Relation:

Electronic Materials

Volume:

10

Issue:

2

Start page:

18

End page:

23

Resource type:

Text

Detailed Resource Type:

Article

Format:

application/pdf

Source:

ITME, sygn. dostępny ; click here to follow the link

Language:

pol

Rights:

Rights Reserved - Free Access

Terms of use:

Copyright-protected material. May be used within the limits of statutory user freedoms

Digitizing institution:

Institute of Electronic Materials Technology

Original in:

Library of the Electronic Materials Technology Institute

Projects co-financed by:

Programme Innovative Economy, 2010-2014, Priority Axis 2. R&D infrastructure ; European Union. European Regional Development Fund

Access:

Open