@misc{Caban_Piotr_Wpływ_2008,
 author={Caban Piotr},
 volume={36},
 number={4},
 copyright={Rights Reserved - Free Access},
 journal={Electronic Materials},
 address={Warszawa},
 howpublished={online},
 year={2008},
 publisher={ITME},
 language={pol},
 title={Wpływ trawienia podłoży 4H-SiC na epitaksję GaN = The influence of the 4H-SiC substrats etching on GaN epitaxy},
 type={Text},
 URL={http://rcin.org.pl./Content/7480/PDF/WA901_16018_M1-r2008-t36-z4_Mater-Elektroniczne_Caban_i.pdf},
 keywords={Electronic - materials, Electronic - journal - materials, LP MOVPE, GaN, 4H-SiC},
}