@misc{Jasik_Agata_Wytwarzanie_1998,
 author={Jasik Agata},
 volume={26},
 editor={Strupiński Włodzimierz},
 editor={Kosiel Kamil},
 number={3/4},
 copyright={Rights Reserved - Free Access},
 journal={Electronic Materials},
 address={Warszawa},
 howpublished={online},
 year={1998},
 publisher={ITME},
 language={pol},
 title={Wytwarzanie heterostruktur InP/InGaAs metodą epitaksji z fazy gazowej z użyciem metaloorganiki (MOVPE) = InGaAs/InP heterostructures made using metalorganic vapor phase epitaxy},
 type={Text},
 URL={http://rcin.org.pl./Content/17431/PDF/WA901_15248_M1_r1998-t26-z3-4_Mater-Elektron-Jas_i.pdf},
 keywords={heterostructure, MOVPE, In/InGaAs, Electronic - materials, Electronic - journal - materials},
}