@misc{Nossarzewska-Orłowska_Elżbieta_Characterization_1992,
 author={Nossarzewska-Orłowska Elżbieta},
 volume={20},
 editor={Kamiński Paweł},
 editor={Sarnecki Jerzy},
 editor={Kozłowski Roman},
 number={4},
 copyright={Rights Reserved - Free Access},
 journal={Electronic Materials},
 address={Warszawa},
 howpublished={online},
 year={1992},
 publisher={ITME},
 language={eng},
 title={Characterization of epitaxial silicon for MOS VLSI IC by deep level transsient spectroscopy and minority carrier lifetime measurements =},
 type={Text},
 URL={http://rcin.org.pl./Content/11879/PDF/WA901_14200_M1_r1992-t20-z4_Mater-Elektroniczne_Nossarzewska_i.pdf},
 keywords={Electronic - materials, epitaxial layer, minority carrier lifetime},
}